AP9965GEH Advanced Power Electronics Corp., AP9965GEH Datasheet
AP9965GEH
Specifications of AP9965GEH
Related parts for AP9965GEH
AP9965GEH Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter 1 Parameter AP9965GEH/J RoHS-compliant Product BV 40V DSS D R 28mΩ DS(ON) I 27A □ ...
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... AP9965GEH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... 0.0 7.0 8.0 Fig 2. Typical Output Characteristics 2.0 I =18A D V =10V G 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 50.0 40.0 30.0 20.0 10.0 1.6 0 Fig 6. On-Resistance vs. Drain Current AP9965GEH/J 10V C 7 .0V 5.0V 4 =3.0V G 2.0 4.0 6.0 8 Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( =4. =10V ...
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... AP9965GEH =18A =20V DS V =25V DS V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...