AP9965GEJ Advanced Power Electronics Corp., AP9965GEJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9965GEJ

Manufacturer Part Number
AP9965GEJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP9965GEH.pdf (4 pages)

Specifications of AP9965GEJ

Vds
40V
Vgs
±16V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
32
Qg (nc)
8.5
Qgs (nc)
1.6
Qgd (nc)
4.1
Id(a)
27
Pd(w)
31.25
Configuration
Single N
Package
TO-251
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9965GEJ)
are available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
□
D
S
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
31.25
D
0.25
G
+16
40
27
17
80
DS(ON)
D
DSS
G
S
Value
AP9965GEH/J
62.5
4.0
110
D
S
TO-252(H)
TO-251(J)
28mΩ
200903094
Units
W/℃
Units
℃/W
℃/W
℃/W
40V
27A
W
℃
℃
V
V
A
A
A
1

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AP9965GEJ Summary of contents

Page 1

... The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9965GEJ) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP9965GEH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 0.0 1.0 2.0 3.0 4.0 5.0 6 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 70 I =12A = ...

Page 4

AP9965GEH =18A =20V DS V =25V DS V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 =25 ...

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