AP9971GD Advanced Power Electronics Corp., AP9971GD Datasheet

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... Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP Parameter 10V 10V GS 1 Parameter 3 AP9971GD RoHS-compliant Product BV 60V DSS R 50mΩ DS(ON Rating Units 60 + 0.016 W/℃ -55 to 150 ...

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... AP9971GD Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... D = =10V o G =25 C 1.6 A 1.2 0.8 0.4 0.0 11 -50 Fig 4. Normalized On-Resistance 2 1.2 0.8 0.4 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9971GD o C 10V 6.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ,Junction Temperature ( C) ...

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... AP9971GD =48V DS V =38V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : PDIP Part Marking Information & Packing : PDIP-8 9971GD YWWSSS 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.    Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y： ...