AP9971GJ Advanced Power Electronics Corp., AP9971GJ Datasheet - Page 2

• Manufacturer Part Number: AP9971GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9971GJ

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 18
• Qgs (nc): 6
• Qgd (nc): 11
• Id(a): 25
• Pd(w): 39
• Configuration: Single N
• Package: TO-251

BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
t
Notes:
AP9971GH/J
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board
Parameter
Parameter
2
2
2
2
j
=25
j
=125
o
C(unless otherwise specified)
2
o
C)
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=25A, V
=18A,
=18A
=18A
=3.3Ω,V
=1.67Ω
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=60V, V
=48V ,V
= +20V, V
=48V
=4.5V
=30V
=0V
=25V
GS
Test Conditions
Test Conditions
V
, I
D
GS
GS
D
=250uA
D
D
D
=250uA
GS
GS
GS
=18A
=18A
=0V
=0
=12A
DS
=0V
=0V
=10V
V
=0V
,
D
=1mA
Min.
Min.
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1700 2700
Typ.
0.05
Typ.
160
110
17
18
11
24
26
37
38
6
9
7
-
-
-
-
-
-
-
-
Max. Units
+100
Max. Units
250
1.2
36
50
30
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2