AP9972GI Advanced Power Electronics Corp., AP9972GI Datasheet

Page 1

... Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9972GI Pb Free Plating Product BV 60V DSS R 18mΩ DS(ON) I 35A TO-220CFM(I) Rating Units 60 ±25 ...

Page 2

... AP9972GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D o =25 C 1.4 V =10V G 1.2 1.0 0.8 0.6 10 -50 T Fig 4. Normalized On-Resistance 1.7 o 1 0.7 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972GI 10V 7. 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972GI =48V DS V =38V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 100 V = ...