AP9972GR Advanced Power Electronics Corp., AP9972GR Datasheet
AP9972GR
Specifications of AP9972GR
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AP9972GR Summary of contents
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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP9972GR RoHS-compliant Product BV 60V DSS R 18mΩ DS(ON) I 60A TO-262(R) S Rating Units 60 V ...
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... AP9972GR Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.6 I =35A D V =10V G 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1 0.7 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP9972GR o 10V C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP9972GR =38V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 100 V =5V ...