AP9973GD Advanced Power Electronics Corp., AP9973GD Datasheet - Page 3

• Manufacturer Part Number: AP9973GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9973GD

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 8
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 3.9
• Pd(w): 2
• Configuration: Dual N
• Package: PDIP-8

40
35
30
25
20
15
10
95
90
85
80
75
70
5
0
4
3
2
1
0
0
3
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
A
1
=25
V
j
0.2
=150
SD
V
V
Reverse Diode
o
DS
GS
, Source-to-Drain Voltage (V)
C
2
o
5
C
, Drain-to-Source Voltage (V)
0.4
, Gate-to-Source Voltage (V)
3
0.6
4
7
0.8
5
T
1
6
9
j
T
=25
I
A
D
V
=25
=3.9A
G
o
1.2
6.0V
5.0V
4.5V
C
=3.0V
7
10V
o
C
1.4
11
8
2.5
2.0
1.5
1.0
0.5
0.0
2.5
1.5
0.5
30
25
20
15
10
5
0
2
1
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
T
D
G
=3.9A
A
1
=10V
=150
Junction Temperature
v.s. Junction Temperature
V
T
T
DS
o
j
2
0
0
j
C
,Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
3
4
50
50
5
AP9973GD
V
100
100
6
o
o
G
C)
C)
=3.0V
6.0V
5.0V
4.5V
10V
7
150
150
8
3/4