Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

 

AP9973GH-HF

Manufacturer Part NumberAP9973GH-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP9973GH-HF datasheets

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Specifications of AP9973GH-HF

Vds60VVgs±20V
Rds(on) / Max(m?) Vgs@10v80Rds(on) / Max(m?) Vgs@4.5v100
Qg (nc)8Qgs (nc)3
Qgd (nc)4Id(a)14
Pd(w)27ConfigurationSingle N
PackageTO-252  
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Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9973GJ) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP9973GH/J-HF
Halogen-Free Product
BV
60V
DSS
R
80mΩ
DS(ON)
I
14A
D
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
Units
60
V
+20
V
14
A
9
A
40
A
27
W
0.22
W/℃
-55 to 150
℃
-55 to 150
℃
Value
Unit
4.5
℃/W
3
62.5
℃/W
110
℃/W
201008034
1

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AP9973GH-HF Summary of contents

  • Page 1

    ... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9973GH/J-HF Halogen-Free Product BV 60V DSS R 80mΩ DS(ON) I 14A TO-252( ...

  • Page 2

    ... AP9973GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... I = =10V G 2.0 1.5 1.0 0.5 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4 2 1.6 o =25 C 1.2 0.8 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9973GH/J-HF 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( C) 2.01E+ 100 150 o T ,Junction Temperature ( ...

  • Page 4

    ... AP9973GH/J- 30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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