AP9973GI Advanced Power Electronics Corp., AP9973GI Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9973GI

Manufacturer Part Number
AP9973GI
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9973GI

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
80
Rds(on) / Max(m?) Vgs@4.5v
100
Qg (nc)
8
Qgs (nc)
3
Qgd (nc)
4
Id(a)
14
Pd(w)
25
Configuration
Single N
Package
TO-220CFM
▼ Fast Switching Performance
▼ Single Drive Requirement
▼ Full Isolation Package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
±20
60
14
40
25
DS(ON)
D
9
DSS
S
Value
5.0
65
AP9973GI
TO-220CFM(I)
201210072
80mΩ
Units
Units
℃/W
℃/W
60V
14A
W
V
V
A
A
A
1

Related parts for AP9973GI

AP9973GI Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9973GI RoHS-compliant Product BV 60V DSS R 80mΩ DS(ON) I 14A TO-220CFM(I) S Rating Units 60 ± ...

Page 2

... AP9973GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.31 0.4 10 -50 Fig 4. Normalized On-Resistance 2 1.8 o 1.6 =25 C 1.4 1.2 1 0.8 -50 1.4 1.6 Fig 6. Gate Threshold Voltage v.s. AP9973GI 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP9973GI =30V DS V =38V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO LOGO 9973GI YWWSSS A A SYMBOLS φ e 1.All Dimensions Are in Millimeters 2.Dimension Does Not Include Mold Protrusions. ...

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