AP9977GH-HF Advanced Power Electronics Corp., AP9977GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9977GH-HF

Manufacturer Part Number
AP9977GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9977GH-HF

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
100
Rds(on) / Max(m?) Vgs@4.5v
125
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
11
Pd(w)
21
Configuration
Single N
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9977GH-HF
Manufacturer:
AP
Quantity:
20 000
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9977GJ) are
available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.17
+25
AP9977GH/J-HF
6.8
60
11
45
21
DS(ON)
G
D
DSS
Value
S
62.5
110
G
6
D
S
TO-251(J)
TO-252(H)
100mΩ
200901134
Units
W/℃
Units
℃/W
℃/W
℃/W
60V
11A
W
V
V
A
A
A
1

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AP9977GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9977GH/J-HF Halogen-Free Product BV 60V DSS R 100mΩ DS(ON) I 11A TO-252( ...

Page 2

... AP9977GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I = =10V G o =25 C 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance 1 0.7 0.3 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP9977GH/J-HF 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature ...

Page 4

... AP9977GH/J- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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