AP3R604AGH-HF Advanced Power Electronics Corp., AP3R604AGH-HF Datasheet

AP3R604AGH-HF

Manufacturer Part Number
AP3R604AGH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP3R604AGH-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
3.7
Qg (nc)
52
Qgs (nc)
10
Qgd (nc)
23
Id(a)
75
Pd(w)
104
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
D
@T
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
A
=25℃
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
3
4
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
AP3R604AGH-HF
Rating
BV
R
I
D
+20
130
300
104
40
75
75
DS(ON)
2
G
DSS
Value
62.5
D
1.2
S
TO-252(H)
3.7mΩ
201011091
Units
Units
℃/W
℃/W
40V
75A
W
W
V
V
A
A
A
A
1

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AP3R604AGH-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP3R604AGH-HF Halogen-Free Product BV 40V DSS R 3.7mΩ DS(ON) I 75A □ S TO-252(H) Rating ...

Page 2

... AP3R604AGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V G 1.6 1.2 0.8 0.4 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA D 1 0.8 0.4 0.0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3R604AGH-HF o 10V T =150 C C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP3R604AGH- =40A D V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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