AP9467GM-HF Advanced Power Electronics Corp., AP9467GM-HF Datasheet

AP9467GM-HF

Manufacturer Part Number
AP9467GM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9467GM-HF

Vds
60
Vgs
20
Rds(on) / Max(m?) Vgs@10v
21
Rds(on) / Max(m?) Vgs@4.5v
45
Qg (nc)
30
Qgs (nc)
5
Qgd (nc)
10
Id(a)
7.8
Pd(w)
2.5
Configuration
Single N
Package
S0-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9467GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D
3
3
D
SO-8
D
D
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
7.8
6.3
2.5
60
40
DS(ON)
DSS
G
AP9476GM-HF
Value
50
D
21mΩ
S
201011102
7.8A
Units
℃/W
60V
Unit
W
V
V
A
A
A
1

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AP9467GM-HF Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ...

Page 2

AP9476GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ℃ ...

Page 4

AP9476GM- =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 ...

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