AP9962AGP-HF Advanced Power Electronics Corp., AP9962AGP-HF Datasheet

AP9962AGP-HF

Manufacturer Part Number
AP9962AGP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9962AGP-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
20
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
12
Qgs (nc)
2.7
Qgd (nc)
7.8
Id(a)
32
Pd(w)
27.8
Configuration
Single N
Package
TO-220
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
27.8
+20
120
S
40
32
20
AP9962AGP-HF
DS(ON)
DSS
Value
4.5
62
TO-220(P)
20mΩ
200810282
Units
Units
℃/W
℃/W
40V
32A
W
V
V
A
A
A
1

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AP9962AGP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9962AGP-HF Halogen-Free Product BV 40V DSS R 20mΩ DS(ON) I 32A D G TO-220( Rating Units ...

Page 2

... AP9962AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =20A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.2 o =25 C 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9962AGP-HF o 10V C 7.0V 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP9962AGP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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