AP4511GM-HF Advanced Power Electronics Corp., AP4511GM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4511GM-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GM-HF

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4511GM-HF
50
40
30
20
10
60
55
50
45
40
35
30
0
6
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
T
Fig 5. Forward Characteristic of
A
= 25
0.2
o
T
Reverse Diode
C
-V
1
j
-V
-V
=150
SD
4
GS
DS
, Source-to-Drain Voltage (V)
0.4
,Gate-to-Source Voltage (V)
o
, Drain-to-Source Voltage (V)
C
2
0.6
6
3
0.8
T
I
T
A
D
8
=25
j
= -4 A
V
=25
4
G
1
= - 3.0V
o
o
-7.0V
-5.0V
-4.5V
C
-10V
C
10
1.2
5
1.4
1.2
1.0
0.8
0.6
1.5
1.3
1.1
0.9
0.7
0.5
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
V
= 150
I
G
D
v.s. Junction Temperature
Junction Temperature
-V
=-10V
1
=-6A
T
DS
T
o
0
0
j
C
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
3
100
100
o
V
o
C)
4
C)
G
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
150
5
150
6