AP9581GS-HF Advanced Power Electronics Corp., AP9581GS-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9581GS-HF

Manufacturer Part Number
AP9581GS-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9581GS-HF

Vds
-80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
15
Rds(on) / Max(m?) Vgs@4.5v
20
Qg (nc)
72
Qgs (nc)
11
Qgd (nc)
45
Id(a)
60
Pd(w)
165
Configuration
Single P
Package
TO-263

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9581GS-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
-300
+20
250
-80
-95
-60
DS(ON)
DSS
G
AP9581GS-HF
Value
0.5
D S
40
TO-263(S)
15mΩ
201003291
-80V
-95A
o
o
Units
Units
C/W
C/W
W
o
o
V
V
A
A
A
C
C
1

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AP9581GS-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP9581GS-HF Halogen-Free Product BV -80V D DSS R 15mΩ DS(ON) I -95A TO-263(S) ...

Page 2

... AP9581GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 0.2 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9581GS-HF -10V o C -8.0V -7.0V -6. -5. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9581GS- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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