AP95T07AGP-HF Advanced Power Electronics Corp., AP95T07AGP-HF Datasheet

Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP95T07AGP-HF

Manufacturer Part Number
AP95T07AGP-HF
Description
Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP95T07AGP-HF

Vds
75V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.8
Qg (nc)
150
Qgs (nc)
13
Qgd (nc)
43
Id(a)
170
Pd(w)
680
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
GS
@ 10V(Package Limited)
@ 10V(Silicon Limited)
@ 10V(Silicon Limited)
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 175
-55 to 175
D
AP95T07AGP-HF
Rating
BV
R
I
S
D
+20
170
120
120
680
300
75
DS(ON)
DSS
Value
0.5
62
TO-220(P)
4.8mΩ
200908171
170A
Units
Units
℃/W
℃/W
75V
W
V
V
A
A
A
A
1

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AP95T07AGP-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V(Silicon Limited 10V(Silicon Limited 10V(Package Limited Parameter AP95T07AGP-HF Halogen-Free Product BV 75V DSS R 4.8mΩ DS(ON) I 170A D G TO-220( Rating Units 75 ...

Page 2

... AP95T07AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =60A D V =10V G 2.0 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP95T07AGP-HF 10V 175 C C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...

Page 4

... AP95T07AGP- =40V =45V DS V =60V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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