AP60T10GP Advanced Power Electronics Corp., AP60T10GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP60T10GP

Manufacturer Part Number
AP60T10GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP60T10GP.pdf (4 pages)

Specifications of AP60T10GP

Vds
100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
23
Qg (nc)
55
Qgs (nc)
15
Qgd (nc)
24
Id(a)
57
Pd(w)
167
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T10GP)
are available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
4
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
100
+20
250
167
288
S
67
42
DS(ON)
G D
DSS
Value
AP60T10GS/P
0.75
40
62
S
TO-263(S)
TO-220(P)
200911104
18mΩ
100V
Units
Units
℃/W
℃/W
℃/W
67A
W
mJ
℃
℃
V
V
A
A
A
1

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AP60T10GP Summary of contents

Page 1

... The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T10GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP60T10GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source ...

Page 3

160 120 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1.2 1.1 1 0.9 0.8 - 100 T , Junction Temperature ...

Page 4

AP60T10GS Total Gate Charge (nC) G Fig 7. ...

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