AP75T10AGP Advanced Power Electronics Corp., AP75T10AGP Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP75T10AGP

Manufacturer Part Number
AP75T10AGP
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP75T10AGP

Vds
105V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
15
Qg (nc)
63
Qgs (nc)
9
Qgd (nc)
30
Id(a)
65
Pd(w)
138
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
applications such as DC/DC converters.
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial through hole applications and suited for low voltage
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.11
105
±20
260
138
S
65
41
DS(ON)
DSS
Value
AP75T10AGP
0.9
62
TO-220(P)
200817071-1/4
15mΩ
105V
Units
W/℃
Units
℃/W
℃/W
65A
W
V
V
A
A
A

Related parts for AP75T10AGP

AP75T10AGP Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP75T10AGP RoHS-compliant Product BV 105V DSS R 15mΩ DS(ON) I 65A D G TO-220( Rating Units 105 ± ...

Page 2

... AP75T10AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =30A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP75T10AGP 10V o C 7.0V 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP75T10AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 75T10AGP LOGO YWWSSS Part Number Package Code meet Rohs requirement Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.25 4.48 b 0.65 0. 1.15 1.38 c 0.40 0. ...

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