AP75T10BGP-HF Advanced Power Electronics Corp., AP75T10BGP-HF Datasheet
AP75T10BGP-HF
Specifications of AP75T10BGP-HF
Related parts for AP75T10BGP-HF
AP75T10BGP-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP75T10BGP-HF Halogen-Free Product BV 100V DSS R 12mΩ DS(ON) I 75A D G TO-220( Rating Units ...
Page 2
... AP75T10BGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... Fig 2. Typical Output Characteristics 2.4 I =30A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 =25 C 0.5 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP75T10BGP-HF 10V o C 6.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
Page 4
... AP75T10BGP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...