AP75T10GS Advanced Power Electronics Corp., AP75T10GS Datasheet
AP75T10GS
Specifications of AP75T10GS
Related parts for AP75T10GS
AP75T10GS Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP75T10GS/P RoHS-compliant Product BV 100V DSS R 15mΩ DS(ON) I 65A TO-263(S) G TO-220(P) D ...
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... AP75T10GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... =10V C G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 =25 C 0.5 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP75T10GS 10V 6.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
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... AP75T10GS Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 75T10GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 75T10GS YWWSSS YWWSSS θ θ Part Number Package Code LOGO Date Code (YWWSSS) Millimeters ...