AP78T10GP-HF Advanced Power Electronics Corp., AP78T10GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP78T10GP-HF

Manufacturer Part Number
AP78T10GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP78T10GP-HF

Vds
100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
14
Qg (nc)
54
Qgs (nc)
15
Qgd (nc)
25
Id(a)
68
Pd(w)
2
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
138.8
D
100
+20
240
S
68
43
DS(ON)
AP78T10GP-HF
2
DSS
Value
0.9
62
TO-220(P)
201006071
14mΩ
100V
Units
Units
℃/W
℃/W
68A
W
W
V
V
A
A
A
1

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AP78T10GP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP78T10GP-HF Halogen-Free Product BV 100V DSS R 14mΩ DS(ON) I 68A D G TO-220( Rating Units ...

Page 2

... AP78T10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 100 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.6 0.4 0.2 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP78T10GP-HF 10V 150 C C 8.0V 7. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

... AP78T10GP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by 100 R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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