AP85T08GP Advanced Power Electronics Corp., AP85T08GP Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP85T08GP

Manufacturer Part Number
AP85T08GP
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP85T08GP.pdf (6 pages)

Specifications of AP85T08GP

Vds
80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13
Qg (nc)
63
Qgs (nc)
23
Qgd (nc)
38
Id(a)
75
Pd(w)
138
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85T08GP) are available for low-profile applications.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.11
±20
260
138
450
S
80
75
48
30
DS(ON)
G D
DSS
Value
AP85T08GS/P
0.9
62
S
TO-263(S)
TO-220(P)
200912072-1/4
13mΩ
Units
W/℃
Units
℃/W
℃/W
80V
75A
mJ
W
℃
℃
V
V
A
A
A
A

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AP85T08GP Summary of contents

Page 1

... The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T08GP) are available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP85T08GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total ...

Page 3

200 150 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ...

Page 4

AP85T08GS Total Gate Charge (nC) G Fig ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 85T08GS YWWSSS YWWSSS θ θ Part Number Part Number Package Code Package Code LOGO ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 85T08GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.25 4.48 b 0.65 0. 1.15 1.38 c 0.40 0.50 c1 1.00 1.20 E 9.70 10.00 E1 --- --- ...

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