AP9950AGH-HF Advanced Power Electronics Corp., AP9950AGH-HF Datasheet

AP9950AGH-HF

Manufacturer Part Number
AP9950AGH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9950AGH-HF

Vds
68V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
10.5
Qg (nc)
58
Qgs (nc)
14
Qgd (nc)
24
Id(a)
70
Pd(w)
92.6
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
3
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
92.6
+20
240
AP9950AGH-HF
68
70
45
DS(ON)
2
G
DSS
D S
Value
1.35
62.5
TO-252(H)
10.5mΩ
201110262
Units
Units
℃/W
℃/W
68V
70A
W
W
V
V
A
A
A
1

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AP9950AGH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP9950AGH-HF Halogen-Free Product BV 68V DSS R 10.5mΩ DS(ON) I 70A TO-252(H) Rating Units 68 ...

Page 2

... AP9950AGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 2.0 I =250uA D 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9950AGH-HF 10V 150 C C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...

Page 4

... AP9950AGH- =30A D V =56V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by 100 R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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