AP9950GP Advanced Power Electronics Corp., AP9950GP Datasheet - Page 3

• Manufacturer Part Number: AP9950GP
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9950GP

• Vds: 70V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 31
• Qgs (nc): 6
• Qgd (nc): 20.5
• Id(a): 70
• Pd(w): 113.6
• Configuration: Single N
• Package: TO-220

200
160
120
80
40
18
16
14
12
10
40
30
20
10
0
8
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
1
V
o
V
C
T
Reverse Diode
DS
V
SD
j
4
=150
GS
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
2
o
C
0.6
3
6
T
I
0.8
C
D
=25
=30A
4
o
T
C
j
1
=25
8
V
o
C
GS
5
1.2
=4.0V
7.0V
6.0V
5.0V
10V
1.4
6
10
120
100
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
D
C
G
=40A
= 150
=10V
V
v.s. Junction Temperature
Junction Temperature
DS
o
T
T
C
0
0
2
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
50
50
4
AP9950GP
100
100
6
o
o
V
C)
C)
GS
=4.0V
7.0V
6.0V
5.0V
10V
150
150
8
3