AP55T10GP-HF Advanced Power Electronics Corp., AP55T10GP-HF Datasheet
AP55T10GP-HF
Specifications of AP55T10GP-HF
Related parts for AP55T10GP-HF
AP55T10GP-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP55T10GP-HF Halogen-Free Product BV 100V DSS R 16.5mΩ DS(ON) I 56A D G TO-220( Rating Units 100 ...
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... AP55T10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 -50 150 200 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA D 1.2 0 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP55T10GP-HF 10V o C 9.0V 8. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 200 ...
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... AP55T10GP- =80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this 100 area limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...