AP85T10AGP-HF Advanced Power Electronics Corp., AP85T10AGP-HF Datasheet
AP85T10AGP-HF
Specifications of AP85T10AGP-HF
Related parts for AP85T10AGP-HF
AP85T10AGP-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP85T10AGP-HF Halogen-Free Product BV 100V DSS R 8mΩ DS(ON) I 100A D G TO-220( Rating Units ...
Page 2
... AP85T10AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I =250uA D 1 1.2 0.8 0.4 0.0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP85T10AGP- =150 C 10V C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
Page 4
... AP85T10AGP- =40A D V =80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...