AP98T07GP-HF Advanced Power Electronics Corp., AP98T07GP-HF Datasheet

AP98T07GP-HF

Manufacturer Part Number
AP98T07GP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP98T07GP-HF

Vds
75V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.5
Qg (nc)
120
Qgs (nc)
20
Qgd (nc)
54
Id(a)
145
Pd(w)
166
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
@T
C
c
c
Symbol
Symbol
=25℃
=100℃
c
A
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
D
-55 to 150
-55 to 150
Rating
BV
R
I
S
D
+20
145
120
300
166
75
90
DS(ON)
AP98T07GP-HF
2
DSS
Value
0.75
62
TO-220(P)
4.5mΩ
201104121
145A
Units
Units
℃/W
℃/W
75V
W
W
V
V
A
A
A
A
1

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AP98T07GP-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP98T07GP-HF Halogen-Free Product BV 75V DSS R 4.5mΩ DS(ON) I 145A D G TO-220( Rating Units 75 V ...

Page 2

... AP98T07GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V G 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I =250uA D 1 =25 C 1.2 j 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP98T07GP- =150 C 10V C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP98T07GP- =40A D V =60V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 160 ...

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