AP09T10GH-HF

Manufacturer Part NumberAP09T10GH-HF
ManufacturerAdvanced Power Electronics Corp.
AP09T10GH-HF datasheet
 

Specifications of AP09T10GH-HF

Vds100VVgs±20V
Rds(on) / Max(m?) Vgs@10v300Rds(on) / Max(m?) Vgs@4.5v600
Qg (nc)5.5Qgs (nc)1.2
Qgd (nc)2.2Id(a)4.4
Pd(w)12.5ConfigurationSingle N
PackageTO-252  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower Gate Chage
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with the
The Advanced Power MOSFETs from APEC provide the
best combination of fast switching, ruggedized device design, low on-
designer with the best combination of fast switching,
resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
3
Parameter
AP09T10GH-HF
Preliminary
BV
100V
DSS
R
300mΩ
DS(ON)
I
5A
D
G
D
S
TO-252(H)
Rating
Units
100
V
+20
V
5
A
3
A
12
A
12.5
W
2
W
-55 to 150
-55 to 150
Value
Units
10
℃/W
3
62.5
℃/W
20110822pre
1

AP09T10GH-HF Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09T10GH-HF Preliminary BV 100V DSS R 300mΩ DS(ON TO-252(H) Rating Units ...

  • Page 2

    ... AP09T10GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...