AP09T10GH-HF Advanced Power Electronics Corp., AP09T10GH-HF Datasheet

AP09T10GH-HF

Manufacturer Part Number
AP09T10GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP09T10GH-HF

Vds
100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
300
Rds(on) / Max(m?) Vgs@4.5v
600
Qg (nc)
5.5
Qgs (nc)
1.2
Qgd (nc)
2.2
Id(a)
4.4
Pd(w)
12.5
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Lower Gate Chage
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
The Advanced Power MOSFETs from APEC provide the
best combination of fast switching, ruggedized device design, low on-
designer with the best combination of fast switching,
resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
3
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
12.5
100
+20
12
AP09T10GH-HF
DS(ON)
5
3
2
G
DSS
D
Value
62.5
10
Preliminary
S
TO-252(H)
20110822pre
300mΩ
100V
Units
Units
℃/W
℃/W
5A
W
W
V
V
A
A
A
1

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AP09T10GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09T10GH-HF Preliminary BV 100V DSS R 300mΩ DS(ON TO-252(H) Rating Units ...

Page 2

... AP09T10GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

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