AP03N40AP-HF Advanced Power Electronics Corp., AP03N40AP-HF Datasheet

AP03N40AP-HF

Manufacturer Part Number
AP03N40AP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP03N40AP-HF

Vds
400V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
2600
Qg (nc)
11
Qgs (nc)
2.5
Qgd (nc)
5
Id(a)
2.7
Pd(w)
2
Configuration
Single N
Package
TO-220
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
V
V
I
I
P
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The AP03N40A provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The good thermal performance and low package
cost, Contribute to its wide industry application.
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
C
Symbol
Symbol
C
A
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
44.6
G
400
+20
2.7
10
DS(ON)
AP03N40AP-HF
2
D
DSS
Value
S
2.8
62
TO-220(P)
201010121
2.6Ω
400V
2.7A
Units
℃/W
℃/W
Unit
W
W
V
V
A
A
1

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AP03N40AP-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS 1 Parameter AP03N40AP-HF Halogen-Free Product BV 400V D DSS R 2.6Ω DS(ON TO-220( ...

Page 2

... AP03N40AP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 3 I =1. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA D 1 0.8 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP03N40AP-HF 10V o C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( C) ...

Page 4

... AP03N40AP- = =320V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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