AP09N20BGP-HF Advanced Power Electronics Corp., AP09N20BGP-HF Datasheet - Page 2

• Manufacturer Part Number: AP09N20BGP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N20BGP-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 460
• Rds(on) / Max(m?) Vgs@4.5v: 500
• Qg (nc): 21
• Qgs (nc): 2
• Qgd (nc): 14
• Id(a): 7.8
• Pd(w): 69
• Configuration: Single N
• Package: TO-220

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Electrical Characteristics@T
Source-Drain Diode
AP09N20BGP-HF
DSS
GSS
d(on)
r
d(off)
f
rr
fs
DS(ON)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=25
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
GS
DS
GS
DD
GS
GS
DS
G
=5A, V
=5A, V
=5A
=5A
=3.3Ω
=V
=10V, I
=160V, V
=160V
=25V
=0V, I
=10V, I
=4.5V, I
= +20V, V
=4.5V
=100V
=10V
=0V
GS
Test Conditions
Test Conditions
GS
GS
, I
D
D
=250uA
=0V
=0V,
D
D
D
=250uA
=5A
=5A
=3A
GS
DS
=0V
=0V
Min.
Min.
200
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
630
190
21
14
39
10
1.7
90
45
2
6
9
9
-
-
-
-
-
-
-
+100
Max. Units
1000
Max. Units
33.6
460
500
1.3
25
3
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
uC
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2