AP18N20GI Advanced Power Electronics Corp., AP18N20GI Datasheet

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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP18N20GI RoHS-compliant Product BV 200V DSS R 170mΩ DS(ON) I 18A TO-220CFM(I) S Rating Units 200 ± ...

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... AP18N20GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... I = =10V G 2.4 2.0 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 1 =25 C 1.1 j 0.9 0.7 0.5 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP18N20GI 8.0V V =6.0V G 4.0 8.0 12.0 16 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( Junction Temperature 20 ...

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... AP18N20GI 16 I =10A 100 130 160 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 15 V =5V DS ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO 18N20GI YWWSSS Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y： ...