AP18N20GJ-HF Advanced Power Electronics Corp., AP18N20GJ-HF Datasheet - Page 4

• Manufacturer Part Number: AP18N20GJ-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP18N20GJ-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 170
• Qg (nc): 19
• Qgs (nc): 5
• Qgd (nc): 6
• Id(a): 18
• Pd(w): 89
• Configuration: Single N
• Package: TO-251

AP18N20GH/J-HF
100
15
12
10
15
12
9
6
3
0
1
0
9
6
3
0
0
1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
I
V
Single Pulse
D
T
DS
=10A
C
=5V
=25
V
6
2
Q
V
DS
o
G
C
GS
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
T
, Gate-to-Source Voltage (V)
10
V
j
V
=25
DS
V
DS
12
DS
4
=100V
o
=130V
=160V
C
18
6
100
T
j
=150
24
100us
1ms
10ms
100ms
1s
DC
8
o
C
1000
30
10
Fig10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
10
0.00001
1
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
Duty factor=0.5
G
0.01
0.02
Single Pulse
0.05
0.2
0.1
0.0001
11
Q
V
GS
DS
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
21
Q
Q
G
Charge
GD
0.01
31
0.1
41
P
DM
Duty factor = t/T
Peak T
j
= P
t
f=1.0MHz
DM
T
x R
51
1
thjc
Crss
Coss
Ciss
+ T
Q
C
10
61
4