AP30N30WI Advanced Power Electronics Corp., AP30N30WI Datasheet
AP30N30WI
Specifications of AP30N30WI
Related parts for AP30N30WI
AP30N30WI Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V Parameter AP30N30WI Pb Free Plating Product BV 250V DSS R 68mΩ DS(ON) I 30A TO-3PF S Rating Units 250 ± ...
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... AP30N30WI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... = 2.3 1.8 1.3 0.8 0.3 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.5 1 0.5 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP30N30WI 10V o C 7.0V 6.0V 5. Drain-to-Source Voltage (V) DS =10V 100 Junction Temperature ( C) j 1.5 42 201216053-1 100 ...
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... AP30N30WI 120 160 200 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 40 V =5V DS ...