AP95N25W Advanced Power Electronics Corp., AP95N25W Datasheet

AP95N25 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness

AP95N25W

Manufacturer Part Number
AP95N25W
Description
AP95N25 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP95N25W

Vds
250V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
55
Qg (nc)
168
Qgs (nc)
36
Qgd (nc)
68
Id(a)
50
Pd(w)
150
Configuration
Single N
Package
TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP95N25W
Quantity:
49
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ High Speed Switching
AP95N25 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
V
V
I
I
I
I
P
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
DM
DR
DR(PULSE)
AR
STG
J
DS
GS
D
@T
@T
C
Symbol
Symbol
C
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
3
Parameter
Parameter
1
G
GS
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
1
Max.
Max.
RoHS-compliant Product
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
250
±30
200
200
150
D
1.2
50
50
30
DS(ON)
DSS
S
0.833
Value
40
AP95N25W
TO-3P
200329072-1/4
55mΩ
250V
Units
W/℃
Units
℃/W
℃/W
50A
W
V
V
A
A
A
A
A

Related parts for AP95N25W

AP95N25W Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V Parameter AP95N25W RoHS-compliant Product BV 250V DSS R 55mΩ DS(ON) I 50A D G TO- Rating Units 250 ±30 ...

Page 2

... AP95N25W Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... I =25A =10V G 2.3 1.8 1.3 0.8 0.3 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.2 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP95N25W 10V o 8.0V C 7. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o T ,Junction Temperature ( ...

Page 4

... AP95N25W 120 160 200 120 Q , Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 60 V =10V ...

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