AP95N25W Advanced Power Electronics Corp., AP95N25W Datasheet
AP95N25W
Specifications of AP95N25W
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AP95N25W Summary of contents
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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V Parameter AP95N25W RoHS-compliant Product BV 250V DSS R 55mΩ DS(ON) I 50A D G TO- Rating Units 250 ±30 ...
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... AP95N25W Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... I =25A =10V G 2.3 1.8 1.3 0.8 0.3 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.2 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP95N25W 10V o 8.0V C 7. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o T ,Junction Temperature ( ...
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... AP95N25W 120 160 200 120 Q , Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 60 V =10V ...