AP730P Advanced Power Electronics Corp., AP730P Datasheet
AP730P
Specifications of AP730P
Related parts for AP730P
AP730P Summary of contents
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... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G D TO-220 S Parameter @ 10V GS @ 10V Parameter AP730P BV 400V DSS R 1.0Ω DS(ON Rating Units 400 ± 30 5.5 3 0.59 W/℃ ...
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... AP730P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 1.5 1 0.5 0 -50 100 150 v.s. Junction o =150 Drain-to-Source Voltage (V) DS =2.75A =10V 0 50 100 Junction Temperature ( C) j Fig 4. Normalized On-Resistance v.s. Junction Temperature AP730P =10V =7.0V =6.0V =5.0V =4. 150 ...
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... AP730P Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 = Single Pulse 100 V (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 10us 0.1 100us 1ms 10ms 100ms 0.01 1000 10000 ...
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... 0.1 0.01 0.1 0.3 0.5 0.7 0.9 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 100 Fig 10. Typical Capacitance Characteristics 3 3.1 2.6 2.1 1.6 -50 1.1 1.3 1.5 Fig 12. Gate Threshold Voltage v.s. AP730P f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 150 ...
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... AP730P Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 10V 0.8 x RATED d(on) Fig 14. Switching Time Waveform ...