AP15T20GS-HF Advanced Power Electronics Corp., AP15T20GS-HF Datasheet

AP15T20GS-HF

Manufacturer Part Number
AP15T20GS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP15T20GS-HF

Vds
200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
250
Rds(on) / Max(m?) Vgs@4.5v
260
Qg (nc)
45
Qgs (nc)
5.5
Qgd (nc)
15
Id(a)
10
Pd(w)
62.5
Configuration
Single N
Package
TO-263
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
62.5
200
+20
6.1
10
26
DS(ON)
AP15T20GS-HF
DSS
G
Value
40
2
D
S
TO-263(S)
250mΩ
201202292
200V
Units
℃/W
℃/W
10A
Unit
W
V
V
A
A
A
1

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AP15T20GS-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP15T20GS-HF Halogen-Free Product BV 200V D DSS R 250mΩ DS(ON) I 10A TO-263(S) ...

Page 2

... AP15T20GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... I = =10V GS 2.4 2 1.6 1.2 0.8 0.4 0 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I =250uA D 1.6 1.2 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP15T20GS-HF 10V o C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP15T20GS- = =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 12 10 ...

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