AP08P20GS-HF Advanced Power Electronics Corp., AP08P20GS-HF Datasheet

AP08P20GS-HF

Manufacturer Part Number
AP08P20GS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP08P20GS-HF

Vds
-200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
680
Qg (nc)
20
Qgs (nc)
5
Qgd (nc)
13
Id(a)
-8
Pd(w)
96
Configuration
Single P
Package
TO-263
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP08P20GP) are
available for low-profile applications.
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
3
-55 to 150
-55 to 150
AP08P20GS/P-HF
D
Rating
BV
R
I
D
-200
0.77
+20
S
30
96
DS(ON)
-8
-5
G D
DSS
Value
1.3
40
62
S
TO-263(S)
TO-220(P)
680mΩ
201108052
-200V
Units
W/℃
Units
℃/W
℃/W
℃/W
-8A
W
V
V
A
A
A
1

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AP08P20GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP08P20GS/P-HF Halogen-Free Product BV -200V DSS R 680mΩ DS(ON TO-263( TO-220(P) ...

Page 2

... AP08P20GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =-10V G ℃ =25 1.9 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance 1.5 1.1 o =25 C 0.7 0.3 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP08P20GS/P-HF o -10V C -7.0V -5.0V -4. . Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP08P20GS/P- - -160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Gate-to-Source Voltage (V) GS Fig 11 ...

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