AP02N60I-A Advanced Power Electronics Corp., AP02N60I-A Datasheet

The TO-220CFM package is widely preferred for all commercial-industrial applications

AP02N60I-A

Manufacturer Part Number
AP02N60I-A
Description
The TO-220CFM package is widely preferred for all commercial-industrial applications
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP02N60I-A

Vds
650V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
8000
Qg (nc)
14
Qgs (nc)
2
Qgd (nc)
8.5
Id(a)
2
Pd(w)
22
Configuration
Single N
Package
TO-220CFM
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
V
V
I
I
I
P
E
I
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-220CFM package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies, AC-DC converters and high current high speed switching
circuits.
D
D
DM
AR
DS
GS
D
AS
AR
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
G
GS
GS
@ 10V
@ 10V
2
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D S
Rating
BV
R
I
0.176
± 30
D
1.26
650
3.6
22
80
DS(ON)
2
2
2
DSS
Value
5.7
62
AP02N60I-A
TO-220CFM(I)
200806053
650V
Units
W/℃
℃/W
℃/W
Unit
2A
W
mJ
mJ
V
V
A
A
A
A
1

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AP02N60I-A Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP02N60I-A RoHS-compliant Product BV 650V DSS R 8Ω DS(ON TO-220CFM(I) Rating Units 650 ± ...

Page 2

... AP02N60I-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 3.2 V =10V G I =1A 2.8 D 2.4 2.0 1.6 1.2 0.8 0.4 0.0 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 5.0 4.5 4.0 3.5 C 3.0 2.5 2.0 1.5 1.0 1.01 1.21 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP02N60I-A 10V o C 6.0V 5.5V 5.0V V =4. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 o , Junction Temperature ( ...

Page 4

... AP02N60I = =320V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10.00 1. Single Pulse 0. 100 V ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM A LOGO LOGO 02N60I YWWSSS Option Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS: ...

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