AP03N70I-H Advanced Power Electronics Corp., AP03N70I-H Datasheet
AP03N70I-H
Specifications of AP03N70I-H
Related parts for AP03N70I-H
AP03N70I-H Summary of contents
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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D G Parameter @ 10V GS @ 10V Parameter AP03N70I-H Pb Free Plating Product BV 700V DSS R 4.4Ω DS(ON TO-220CFM(I) Rating 700 ±30 2 ...
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... AP03N70I-H Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 3.0 I =1. =10V G 2.0 1.0 0.0 -50 150 T j Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.1 1.3 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP03N70I 10V 5.0V 4.5V 4.0V V =3. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 o , Junction Temperature ( ...
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... AP03N70I = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform 10000 ...