AP03N70I-H Advanced Power Electronics Corp., AP03N70I-H Datasheet

AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications

AP03N70I-H

Manufacturer Part Number
AP03N70I-H
Description
AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP03N70I-H

Vds
700V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
4400
Qg (nc)
12
Qgs (nc)
3
Qgd (nc)
4
Id(a)
2.5
Pd(w)
29
Configuration
Single N
Package
TO-220CFM
▼ Repetitive Avalanche Rated
▼ Fast Switching Speed
▼ Simple Drive Requirement
▼ RoHS Compliant
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
TO-220CFM type provide high blocking voltage to overcome voltage surge
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
2
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Max.
Max.
Pb Free Plating Product
G
-55 to 150
-55 to 150
Rating
D
BV
R
I
D
0.23
700
±30
2.5
1.6
2.5
29
32
DS(ON)
S
8
DSS
Value
4.3
65
AP03N70I-H
TO-220CFM(I)
200417062-1/4
4.4Ω
700V
2.5A
Units
W/℃
Units
℃/W
℃/W
mJ
W
V
V
A
A
A
A

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AP03N70I-H Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D G Parameter @ 10V GS @ 10V Parameter AP03N70I-H Pb Free Plating Product BV 700V DSS R 4.4Ω DS(ON TO-220CFM(I) Rating 700 ±30 2 ...

Page 2

... AP03N70I-H Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 3.0 I =1. =10V G 2.0 1.0 0.0 -50 150 T j Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.1 1.3 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP03N70I 10V 5.0V 4.5V 4.0V V =3. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 o , Junction Temperature ( ...

Page 4

... AP03N70I = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform 10000 ...

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