AP04N60I Advanced Power Electronics Corp., AP04N60I Datasheet
AP04N60I
Specifications of AP04N60I
Related parts for AP04N60I
AP04N60I Summary of contents
Page 1
... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP04N60I RoHS-compliant Product BV 600V DSS R 2.35Ω DS(ON TO-220CFM(I) Rating Units 600 ...
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... AP04N60I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics =10V 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1.2 1 0.8 0.6 0.4 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP04N60I o C 10V 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...
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... AP04N60I =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...