AP04N70BI Advanced Power Electronics Corp., AP04N70BI Datasheet
AP04N70BI
Specifications of AP04N70BI
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AP04N70BI Summary of contents
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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP04N70BI RoHS-compliant Product BV 600V DSS R 2.4Ω DS(ON TO-220CFM(I) Rating Units 600 ...
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... AP04N70BI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... G 1.5 V =5. =4. 0.5 V =4. Fig 2. Typical Output Characteristics 2.8 2.4 2 1.6 1.2 0.8 0.4 0 100 150 - v.s. Junction Fig 4. Normalized On-Resistance AP04N70BI o T =150 Drain-to-Source Voltage ( = =10V 100 Junction Temperature ( j v.s. Junction Temperature V =10V G V =6. =5.0V ...
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... AP04N70BI 4.5 4 3.5 3 2.5 2 1 Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0. (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 100us 0.1 1ms 10ms 100ms 1s DC 0.01 0.00001 100 1000 Fig 8. Effective Transient Thermal Impedance ...
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... V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 100 Fig 10. Typical Capacitance Characteristics -50 1.2 1.4 1.6 AP04N70BI ( 100 Junction Temperature ( j Fig 12. Gate Threshold Voltage v.s. Junction Temperature f=1.0MHz Ciss Coss Crss 26 31 150 ...
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... AP04N70BI Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 10V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...