AP04N70BP-A Advanced Power Electronics Corp., AP04N70BP-A Datasheet
AP04N70BP-A
Specifications of AP04N70BP-A
Related parts for AP04N70BP-A
AP04N70BP-A Summary of contents
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... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP04N70BP-A RoHS-compliant Product BV 650V DSS R 2.4Ω DS(ON TO-220 S Rating Units 650 ± ...
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... AP04N70BP-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... V =5. =4. 0.5 V =4. Fig 2. Typical Output Characteristics 2.5 2 1.5 1 0.5 0 -50 100 150 o C) v.s. Junction Fig 4. Normalized On-Resistance AP04N70BP =150 Drain-to-Source Voltage ( = =10V 100 Junction Temperature ( j v.s. Junction Temperature V =10V G V =6.0V ...
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... AP04N70BP-A 4.5 4 3.5 3 2.5 2 1 Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0. 100 V (V) DS Fig 7. Maximum Safe Operating Area 40 20 100 125 150 10us 100us 0.1 1ms 10ms 100ms 0.01 1000 10000 Fig 8. Effective Transient Thermal Impedance ...
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... Fig 11. Forward Characteristic of Reverse Diode 10000 100 Fig 10. Typical Capacitance Characteristics 1.2 1.4 1.6 -50 Fig 12. Gate Threshold Voltage v.s. AP04N70BP-A f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 31 150 5/6 ...
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... AP04N70BP Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 10V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...