AP05FN50I Advanced Power Electronics Corp., AP05FN50I Datasheet

AP05FN50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness

AP05FN50I

Manufacturer Part Number
AP05FN50I
Description
AP05FN50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP05FN50I

Vds
500V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1600
Qg (nc)
20
Qgs (nc)
3.3
Qgd (nc)
6.5
Id(a)
4.5
Pd(w)
31.3
Configuration
Single N
Package
TO-220CFM
▼ Fast trr Performance
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
AP05FN50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
31.3
500
+20
4.5
2.7
18
DS(ON)
D
DSS
S
Value
4.0
65
AP05FN50I
TO-220CFM(I)
200812232
1.6Ω
500V
4.5A
Units
℃/W
℃/W
Unit
W
V
V
A
A
A
1

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AP05FN50I Summary of contents

Page 1

... J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP05FN50I RoHS-compliant Product BV 500V D DSS R 1.6Ω DS(ON TO-220CFM(I) S Rating Units ...

Page 2

... AP05FN50I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 3 I =2. =10V -50 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.5 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP05FN50I 10V . 4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP05FN50I =250V =300V DS V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO 05FN50I YWWSSS YWWSSS Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence ...

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