AP05N50I Advanced Power Electronics Corp., AP05N50I Datasheet
AP05N50I
Specifications of AP05N50I
Related parts for AP05N50I
AP05N50I Summary of contents
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... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP05N50I RoHS-compliant Product BV 500V D DSS R 1.4Ω DS(ON TO-220CFM(I) S Rating Units ...
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... AP05N50I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 3 I =2. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.5 0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP05N50I 10V . Drain-to-Source Voltage ( 100 Junction Temperature ( ...
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... AP05N50I 16 I =3. =260V =320V DS V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...