AP09N50P-HF Advanced Power Electronics Corp., AP09N50P-HF Datasheet
AP09N50P-HF
Specifications of AP09N50P-HF
Related parts for AP09N50P-HF
AP09N50P-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N50P-HF Halogen-Free Product BV 500V DSS R 0.75Ω DS(ON TO-220( Rating Units 500 ...
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... AP09N50P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... I = =10V G 2.4 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP09N50P- 9.0 V 7 5.0V G 8.0 12.0 16.0 20.0 24.0 28 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP09N50P- = =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Single Pulse 0. ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...