AP09N70R Advanced Power Electronics Corp., AP09N70R Datasheet
AP09N70R
Specifications of AP09N70R
Related parts for AP09N70R
AP09N70R Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N70R RoHS-compliant Product BV 600V DSS R 0.75Ω DS(ON TO-262(R) S Rating Units 600 +30 9 ...
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... AP09N70R Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... I =4. =10V -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP09N70R o 10V C 6.0V 5.0V 4.5V 4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 ...
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... AP09N70R =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...