AP10N70R-A Advanced Power Electronics Corp., AP10N70R-A Datasheet
AP10N70R-A
Specifications of AP10N70R-A
Related parts for AP10N70R-A
AP10N70R-A Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP10N70R/P-A RoHS-compliant Product BV 650V D DSS R 0.62Ω DS(ON) I 10A TO-262( TO-220(P) ...
Page 2
... AP10N70R/P-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
Page 3
T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1.2 1.1 1 0.9 0.8 - 100 T , Junction Temperature ( ...
Page 4
AP10N70P/R =10A D V =320V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = ...