AP2332GN-HF Advanced Power Electronics Corp., AP2332GN-HF Datasheet
AP2332GN-HF
Specifications of AP2332GN-HF
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AP2332GN-HF Summary of contents
Page 1
... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D SOT-23 G Parameter 10V 10V GS 1 Parameter 3 AP2332GN-HF Halogen-Free Product BV 600V DSS R 300Ω DS(ON) I 27mA Rating Units 600 V + ...
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... AP2332GN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.8 I =16mA D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 2.0 1.5 o =25 C 1.0 0.5 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP2332GN-HF 10V 150 C A 9.0V 8.0V 7. 6.0V G 2.0 4.0 6.0 8.0 10 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 o ...
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... AP2332GN- =0. =200V 0.4 0.8 1.2 1 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1 0.1 Operation in this area limited by R DS(ON) 0.01 0.001 Single Pulse 0.0001 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...