IRF830I-HF Advanced Power Electronics Corp., IRF830I-HF Datasheet - Page 4

• Manufacturer Part Number: IRF830I-HF
• Description: APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
• Manufacturer: Advanced Power Electronics Corp.

Specifications of IRF830I-HF

• Vds: 500V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 1.5
• Qg (nc): 28
• Qgs (nc): 4
• Qgd (nc): 16
• Id(a): 4.5
• Pd(w): 36.7
• Configuration: Single N
• Package: TO-220CFM

IRF830I-HF
0.01
100
0.1
12
10
10
1
8
6
4
2
0
1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this area
limited by R
10%
90%
Single Pulse
V
V
T
I
GS
DS
c
D
=25
=3.1A
DS(ON)
V
V
o
Q
V
DS
C
10
DS
t
G
V
d(on)
DS
=100V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
=250V
10
=400V
t
r
20
100
t
d(off)
30
t
f
100ms
100us
10ms
1ms
DC
1s
1000
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.001
10
0.01
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.02
0.01
Single Pulse
Duty factor=0.5
0.05
G
0.2
0.1
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
0.01
17
P
0.1
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
thjc
25
+ T
C
C
C
Q
C
iss
oss
rss
10
29
4