IXTT75N15 IXYS, IXTT75N15 Datasheet

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IXTT75N15

Manufacturer Part Number
IXTT75N15
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTT75N15

Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
-
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
-
Trr, Typ, (ns)
-
Pd, (w)
-
Rthjc, Max, (k/w)
-
Package Style
TO-268
High Current
Power MOSFET
© 2004 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
C
C
C
C
C
C
J
J
J
GS
GS
DS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
= 250 µA
D
= 250µA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
T
≤ V
J
J
= 125°C
= 25°C
DSS
JM
,
IXTH 75N15
IXTT 75N15
150
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
150
150
±20
±30
300
330
150
300
1.5
75
75
60
6
4
5
±100
250
Max.
4.0
25
23
V/ns
mΩ
mJ
µA
°C
°C
°C
°C
nA
µA
W
A
A
A
V
V
V
V
V
g
g
V
J
Features
Advantages
TO-247 AD (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
R
V
I
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
D25
DSS
DS(on)
DS (on)
G
HDMOS
= 150
=
=
D = Drain
TAB = Drain
S
TM
75
23 mΩ Ω Ω Ω Ω
DS98948C(05/04)
process
V
A
(TAB)
(TAB)

Related parts for IXTT75N15

IXTT75N15 Summary of contents

Page 1

... DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXTH 75N15 IXTT 75N15 Maximum Ratings 150 = 1 MΩ 150 GS ±20 ±30 75 300 1.5 ≤ ...

Page 2

... F -di/dt = 100 A/µ 100V RM R Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 Characteristic Values (T = 25°C, unless otherwise specified) J Min. ...

Page 3

... D S Fig Norm alized to I DS(on) Value vs 10V GS 1 1.6 1.4 1 25º 0 100 120 140 160 180 200 I - Amperes D © 2004 IXYS All rights reserved 200 180 8V 7V 160 140 120 100 6V 5V 1.2 1.4 1.6 1.8 2 2.2 1.8 1.6 6V 1.4 1.2 5V 0.8 0.6 2.5 3 3.5 4 D25 125º ...

Page 4

... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 6 ...

Page 5

... IXYS All rights reserved Fig . 13. M axim tan Puls e W idth - millis ec onds IXTH 75N15 IXTT 75N15 ...

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